Daqo New Energy - Silicon Wafer

Silicon Wafer

125×125 MONO-CRYSTAL SILICON WAFER SPECIFICATION

Parameter	Value	Unit
Material type	CZ Mono-crystalline Silicon
Geometry	Pseudo square wafer
Wafer orientation	（1-0-0）±2	Degree
Conductivity type	P-type
Diameter	150±0.5,165±0.5	mm
Dimension	125×125±0.5	mm
Dopant	B
Resistivity	0.5-3.0	Ω-cm
Oxygen content	≤1E¹⁸	atom/cm3
Carbon content	≤5E¹⁶	atom/cm3
Lifetime	≥10	µs
Square angle	90±0.5	degree
Thickness	200±20	µm
TTV	≤25	µm
Bow/Warp	≤50	µm
Surface	As-cut,cleaned
Surface damage	Saw mark≤15	µm
Surface quality	No crack,no obvious saw mark,no obvious tactility,no abnormal spot,no stain
Edge defect	Depth≤0.5mm,no sharp edge

156×156 MULTI-CRYSTAL SILICON WAFER SPECIFICATION

Parameter	Value	Unit
Material type	Multi-crystalline Silicon/Casting
Geometry	Square wafer
Conductivity type	P-type
Dimension	156×156±0.5	mm
Corner	2.0±0.5	mm
Dopant	B
Resistivity	0.5-3.0	Ω-cm
Oxygen content	≤8E¹⁷	atom/cm3
Carbon content	≤9E¹⁷	atom/cm3
Lifetime	≥2	µs
Square angle	90±0.5	degree
Thickness	200±20	µm
TTV	≤30	µm
Bow/Warp	≤75	µm
Surface	As-cut,cleaned
Surface damage	Saw mark≤15	µm
Surface quality	No crack,no obvious saw mark,no obvious tactility,no abnormal spot,no stain
Grain boundary direction	Vertical to wafer surface
Edge defect	Depth≤0.5mm,no sharp edge